EPC has launched two new radiation resistant GaN FETs. EPC7020 is a 200 V, 11 m Ω, 170 APulsed radiation resistant GaN FET in a 12 mm2 package. EPC7003 is a 100 V, 30 m Ω, 42 APulsed radiation resistant GaN FET in a 1.87 mm2 package.

The total dose radiation ratings of both devices are greater than 1000K Rad (Si), and they have SEE immunity to rated breakdown of 83.7 MeV/mg/cm2 LET and VDS up to 100%. These new devices, as well as other products in the radiation resistant series EPC7019, EPC7014, EPC7004, EPC7018, and EPC7007, all adopt chip level packaging, which is the same as the commercial eGaN FET and IC series. The packaged version will be provided by EPC Space.

The applications that benefit from the performance and rapid deployment of these devices include DC-DC power converters, motor drivers, LiDAR, deep detectors, ion thrusters for space applications, satellites (including those used in LEO and GEO orbits), and avionics.

EPC CEO and co founder Alex Lidow stated, "The radiation resistant product series has a voltage range of 40 V to 200 V and a current range of 4 A to 530 A, covering various applications in harsh environments such as space, including interplanetary scientific missions, high-altitude flight, and other highly reliable military applications.