In recent years, with the development of the field of IoT represented by technologies such as AI (artificial intelligence) and AR (augmented reality), global data traffic is increasing. Especially for data centers responsible for communication management, the miniaturization and efficiency of their servers have become technical problems for manufacturers. Against this background, SiC power devices are highly anticipated for their contribution to miniaturization and high efficiency of the power supply.

Dr. Longcheng Tan, Senior Electrical Engineer and project leader, Murata Power Solutions said:

By using SiC power devices, power products with higher efficiency and higher power density can be developed. At the same time, SiC power devices can also increase the switching frequency, thus reducing the volume of passive elements and heat dissipators. Murata Productions Group has a department responsible for evaluating SiC device manufacturers and their products. In addition to the high reliability of ROHM products, we chose ROHM this time because ROHM‘s service support is very fast, and samples can be provided from the trial production stage. In addition, ROHM‘s SiC MOSFET is also used in the three-phase inverter we are developing, and the relevant products can meet our performance requirements.

Jay Barrus, President, ROHM Semiconductor U.S.A., LLC said:

"I am sincerely pleased to be able to support Murata Power Solutions, a leading enterprise in industrial equipment such as power systems. ROHM is a leading enterprise in SiC power components. It is the first in the industry to provide advanced component technology and power solutions that drive IC and other products, and has achieved remarkable results. In the future, ROHM will continue to work with Murata Power Solutions to further improve the energy efficiency of power supply systems by diving the potential of SiC technology as much as possible for industry and data infrastructure.